Electronic arrangements for passivated silicon nanowires

ABSTRACT

Methods for fabricating passivated silicon nanowires and an electronic arrangement thus obtained are described. Such arrangements may comprise a metal-oxide-semiconductor (MOS) structure such that the arrangements may be utilized for MOS field-effect transistors (MOSFETs) or opto-electronic switches.

CROSS REFERENCE TO RELATED APPLICATIONS

The present application claims priority to U.S. Provisional ApplicationNo. 61/220,980, filed on Jun. 26, 2009 which is incorporated herein byreference in its entirety. The present application may also be relatedto U.S. patent application Ser. No. 12/712,097 for ‘Methods forFabricating High Aspect Ratio Probes and Deforming High Aspect RatioNanopillars and Micropillars’ filed on Feb. 24, 2010, and U.S. patentapplication Ser. No. 12/711,992 for ‘Methods for Fabrication of HighAspect Ratio Micropillars and Nanopillars’ filed on Feb. 24, 2010, thedisclosures of which are also incorporated herein by reference in theirentirety.

STATEMENT OF GOVERNMENT GRANT

The U.S. Government has certain rights in this invention pursuant toGrant No. HR0011-01-1-0054 awarded by Darpa and Grant No. DMR0520565awarded by the National Science Foundation.

FIELD

The present disclosure relates to silicon nanowires. Moreover inparticular, it relates to methods for fabricating passivated siliconnanowires and devices thus obtained.

BACKGROUND

Defining high aspect ratio structures with controllable sidewalls insilicon has become increasingly important both in the nanometer andmicrometer scale for solar cells, microelectronic devices, and chemicalanalysis. High aspect ratio micrometer pillars are used for solar cellinvestigations while nanometer scale high aspect ratio pillars areenabling fundamental investigations in theories of nanoscale pillarstress mechanics, silicon based lasers, and nanoscale electronic devicessuch as finFETs. Currently various nanofabrication techniques exist thatrely on self assembly or bottom-up processing. Some top-down processingenabling reproducibility in nanofabrication can also be found.

Further applications are high surface area chemical sensors, mechanicaloscillators and piezo-resistive sensors. High aspect ratio pillars withdiameters between 50-100 nm could prove useful for core-shell typeplasmonic resonators while pillars with sub-10 nm diameters have shownpromising light emission characteristics.

SUMMARY

According to a first aspect, a method for fabricating an electronicarrangement, comprising providing one or more nanoscale pillars, coatingthe one or more nanoscale pillars with an insulator, depositing a firstconductive layer on the insulator, coating a portion of the firstconductive layer with a dielectric, removing an end portion of the firstconductive layer and the insulator, thereby making electricallyaccessible a portion of the one or more nanoscale pillars, anddepositing a second conductive layer on the dielectric, the secondconductive layer contacting the electrically accessible portion of theone or more nanoscale pillars.

According to a second aspect, a method for fabricating an electronicarrangement, comprising providing one or more nanoscale pillars, coatingthe one or more nanoscale pillars with an insulator, coating theinsulator with a dielectric, removing an end portion of the insulator,thereby making electrically accessible a portion of the one or morenanoscale pillars, and depositing a conductive layer on the dielectric,the conductive layer contacting the electrically accessible portion ofthe one or more nanoscale pillars.

According to a third aspect, a method for fabricating an electronicarrangement, comprising providing one or more nanoscale pillars, coatingthe one or more nanoscale pillars with an insulator, removing theinsulator portion in contact with the nanoscale pillar, coatingremaining insulator portion and an exposed portion of the nanoscaolepillar with a first conductive layer, coating the conductive layer witha dielectric, removing an end portion of the first conductive layer,thereby making electrically accessible a portion of the one or morenanoscale pillars, and depositing a second conductive layer on thedielectric, the second conductive layer contacting the electricallyaccessible portion of the one or more nanoscale pillars.

According to a fourth aspect, an electronic arrangement comprising aplurality of insulator covered semiconductor nanoscale pillar structuressubstantially perpendicular to a planar surface, and a conductive layercoated on the insulator covered semiconductor nanoscale pillarstructures.

According to a fifth ascept, an electronic arrangement comprising aninsulator covered semiconductor substrate, a plurality of nanoscalepillar structures on the substrate, substantially perpendicular to aplanar surface, and a conductive layer covering the insulator and thenanoscale pillar structures, wherein the conductive layer is devoid ofan end portion thereof, so that end portions of the nanoscale pillarstructures are electrically accessible.

BRIEF DESCRIPTION OF DRAWINGS

The accompanying drawings, which are incorporated into and constitute apart of this specification, illustrate one or more embodiments of thepresent disclosure and, together with the description of exampleembodiments, serve to explain the principles and implementations of thedisclosure.

FIGS. 1A-1F shows fabrication steps of a gate on a nanoscale pillar inaccordance with an embodiment of the present disclosure. In particular:

FIG. 1A shows an exemplary nanoscale pillar substrate.

FIG. 1B shows an exemplary insulator passivated nanoscale pillar.

FIG. 1C shows an exemplary insulator passivated nanoscale pillar coatedwith a first conductor.

FIG. 1D shows an exemplary insulator passivated nanoscale pillar coatedwith the first conductor, wherein the conductor is coated with adielectric.

FIG. 1E shows an exemplary insulator passivated nanoscale pillar coatedwith the first conductor, wherein the first conductor is coated with adielectric, and an end portion of the first conductor exposed above thedielectric is removed.

FIG. 1F shows an exemplary insulator passivated nanoscale pillar coatedwith the first conductor, wherein the first conductor is coated with adielectric, and an end portion of the first conductor exposed above thedielectric is removed, and the exposed end portion of the nanoscalepillar and conductor are coated with a second conductor.

FIGS. 2A-2E shows fabrication steps of a metal contact on a nanoscalepillar in accordance with a further embodiment of the presentdisclosure. In particular:

FIG. 2A shows an exemplary nanoscale pillar substrate.

FIG. 2B shows an exemplary insulator passivated nanoscale pillar.

FIG. 2C shows an exemplary insulator passivated nanoscale pillar coatedwith a dielectric.

FIG. 2D shows an exemplary insulator passivated nanoscale pillar coatedwith a dielectric, and an end portion of the nanoscale pillar protrudesfrom a removed portion of the insulator, above the dielectric.

FIG. 2E shows an exemplary insulator passivated nanoscale pillar,wherein the insulator is coated with a dielectric, and the exposedportion of the end portion of the insulator and the nanoscale pillar arecoated with a conductor.

FIG. 3A-3F show fabrication steps of a gate on a metal-semiconductor(MES) nanoscale pillar in accordance with a further embodiment of thepresent disclosure. In particular:

FIG. 3A shows an exemplary nanoscale pillar substrate.

FIG. 3B shows an exemplary insulator passivated nanoscale pillar.

FIG. 3C shows an exemplary insulator passivated nanoscale pillar,wherein the nanoscale pillar and portions of the insulator are coatedwith a first conductive layer.

FIG. 3D shows an exemplary insulator passivated nanoscale pillar,wherein the first conductive layer is coated by a dielectric.

FIG. 3E shows an exemplary insulator passivated nanoscale pillar,wherein a portion of the first conductive layer protruding from thedielectric is removed.

FIG. 3F shows and exemplary insulator passivated nanoscale pillar,wherein a second conductive layer is coated on the protruding portion ofthe nanoscale pillar and the dielectric.

DETAILED DESCRIPTION

In what follows, methods for fabrication of a passivated nanoscaleelectronic component are described in accordance with variousembodiments of the present disclosure. Nanoscale size pillars can befabricated by way of example and not of limitation, by performingstandard photolithographic or electron-beam lithographic techniques,self-assembly to prepare masks for arrays, use of lithography to patterncatalysts and bottom-up techniques such as vapor-liquid-solid (VLS)growth instead of etching. The term ‘nanoscale’ is defined herein to beany structure between 1 nm and 500 nm in width. The term ‘pillar’ isdefined as a substantially upright shaft where the height is muchgreater than the width, e.g., 5-10 times greater than the width.

Photolithography is a process used in microscale fabrication toselectively remove parts of a film or bulk of a substrate. It uses lightto transfer a geometric pattern from a photo mask to a light-sensitivechemical called a photo resist on the substrate. Similarly, electronbeam lithography is a process where a beam of electrons are scanned in apatterned fashion to the electron-beam resist. This is followed by aseries of chemical treatments in a process similar to dark roomprocessing for photography. The photo or electron-beam resists can beutilized as a mask directly, or utilized to pattern a harder mask whichcan have better resilience as compared to masking directly. Inaccordance with an exemplary embodiment, the applicants utilized anelectron-beam resist to fabricate a patterned aluminum oxide (alumina)mask, then removed the electron-beam resist and utilized the patternedalumina during etching. Lithography and highly anisotropic etchingenables a routine fabrication of 30-50 nm nanostructures in silicon withover 40:1 aspect ratios. Such structures can be further reduced indiameter by a subsequent thermal oxidation, wherein the oxidationprocess can be designed to self-terminate such that nanoscale pillarsbelow 10 nm in width can be defined, allowing wide processing latitude.Additionally, control of the oxidation process can produce siliconchannels which are strained. Moreover, the nanoscale pillars can befabricated with tight control over gate length by initially fabricatingthe nanoscale pillars to a length substantially taller than required,then depositing a precisely controlled protective spacer layer, andsubsequently cleaving or polishing the protruding portions of thenanoscale pillars to obtain tightly controlled gate lengths. Controllingthe thickness of the protective spacer layer can be accomplished with ahigher degree of precision as compared to defining lithographic featuresat nanoscale levels. The applicants used transmission and scanningelectron microscopy to observe the nanoscale pillars.

FIGS. 1A-1F show various steps of fabricating a passivated nanoscaleelectronic component in accordance with the disclosure. The personskilled in the art will understand that the number of such steps is onlyindicative and that the process can occur in more or fewer stepsaccording to the various embodiments. For the sake of simplicity,throughout the present disclosure, the term ‘pillar’ intends to indicatenanoscale pillars.

FIG. 1A is a cross-sectional view of a patterned, or etched substrate(10) comprising a substantially vertical nanoscale pillar (20). By wayof example and not of limitation, the substrate (10) and the pillar (20)are made of silicon (Si). As an alternative to this embodiment, thevertical nanoscale pillars can be fabricated on silicon-on-insulator(SOI) instead of bulk silicon structure.

FIG. 1B is a further cross-sectional view where the substrate (10) andthe pillar (20) are covered by an insulator or oxide layer (30), e.g.,silicon dioxide (SiO₂) or other dielectrics. As an alternativeembodiment, a conductor can be utilized instead of an insulator indirect contact with the substrate to produce a metal-semiconductor (MES)structure useful for a MES Field-Effect Transistor (MESFET). Theoxidation process introduces volume expansion within the nanoscalepillars where the vertical nanoscale pillar structure further enablessignificant volume expansion in a lateral and vertical direction.Exposing the silicon embedded in the oxide to very high strain (e.g.,2.5-3.0%) enhances the ability of this device to efficiently emit lightwhich can be utilized, for example, for opto-electronic switching.

FIG. 1C is a further cross-sectional view where the oxide layer (30) onthe substrate (10) and the pillar (20) are covered by a layer of a firstconductive material (40), e.g., gold (Au) or silver (Ag). According toan embodiment of the disclosure, the first conductive material canintroduce electrostatic gates on an exterior perimeter and an endportion of the pillar (20) to modulate the conductivity and defines avertical conductive layer (40)—oxide (30)—semiconductor (20) (MOS)structure. Such embodiment features a very low threshold voltage (e.g.,on the order of 0.5 V) and high on/off ratio with low sub-thresholdslopes (e.g., less than 60 mV/decade), as the first conductive layer(40) can be deposited to surround the silicon nanoscale pillar (20) onall sides, thereby enabling electrostatic control of a channel. A personskilled in the art of semiconductor fabrication will recognize anopportunity to integrate devices with very high density as a dimensionof a conducting channel inside the pillar (20) is nanometers in width.

FIG. 1D is a further cross-sectional view where a portion of the firstconductive layer (40) on the oxide layer (30) on a vertical portion ofthe pillar (20) is coated by a layer of a dielectric material (50),e.g., photo resist, benzocyclobutene (BCB), or poly methyl methacrylate(PMMA). The dielectric material (50) protects the covered portions ofthe first conductive layer (40) and the oxide layer (30) to allowselective removal of the first conductive layer (40) and the oxide layer(30) in the next step.

FIG. 1E is a further cross-sectional view where the unprotected portionsof the oxide (31) and the first conductive layer (51) from FIG. 1D areremoved from an end portion of the nanoscale pillar (20) for example bya process such as etching or chemical-mechanical polishing (CMP). Thefirst conductive layer (40) and the oxide layer (30) on a lower portionof the nanoscale pillar (20) and a portion on the substrate are notremoved, as the dielectric layer (50) acts as a buffer to protect suchportions from being removed. After the removal, a protruding portion(22) of the silicon nanoscale pillar (20) and protruding portions (32)of the oxide layer are exposed, and an exposed portion of the firstconductive layer (43) are coated with the dielectric layer to allow forfurther fabrication in the next steps to form, for example, the sourceor the drain of a FET.

FIG. 1F is a further cross-sectional view where a second conductivelayer (60) is coated, making contact with the dielectric (50), the endportion of the oxide (32) and the end portion of the nanoscale pillar(22). The second conductive layer (60) does not come in contact with thefirst conductive layer (40), and a backside contact (70) is present onthe substrate (10), opposite a side of the insulator (30).

The first conductive material utilized to create the gate material inFIG. 1D can be chosen such that its plasmon resonance coincides with aband gap energy of the silicon nanoscale pillar, enabling the gatematerial to emit light as an opto-electronic transistor. The applicantsobserved that a blue-shift of a bandstructure places the band gap of asilicon quantum wire at 2 eV or 600-700 nm wavelength, where by way ofexample and not of limitation, gold or silver are matched as a Plasmonresonant material.

According to various embodiments in this disclosure, the strain from theoxidation process can alter a band structure of the silicon of thenanoscale pillars, further enhancing its light emitting property togenerate an efficient light emitter for opto-electronic switching.

According to various embodiments in this disclosure, the verticalgeometry of the transistor can be, but is not limited to, a variety ofvertical field-effect transistors (FETs) such asmetal-oxide-semiconductor field-effect transistor (MOSFET),metal-semiconductor FET (MESFET), junction gate FET (JFET), or byremoving the dielectric to expose the gate and act as a sensor.Referring to FIG. 1F, the substrate (10) and the second conductive layer(60) represent a source and a drain (or vice versa) of the MOSFET, whilethe portions (32) of the oxidation layer represent the gate of theMOSFET.

An alternative embodiment of forming a conductive contact to thenanoscale pillars can be provided. Such embodiment is a sequence ofsteps shown in FIGS. 2A-2E. According to such embodiment, the layer(250) of dielectric material (e.g., photo resist) is deposited rightafter deposition of the oxide layer (230) and a means to expose the topportion of the nano scale pillar (222) (e.g., etching orchemical-mechanical polishing (CMP)) is performed, following which aconductive contact (260) is provided on top of the nanoscale pillar(222).

FIGS. 2A-2B are cross-sectional views of the nanoscale pillar on asubstrate (210) where the nanoscale pillar (220) is covered by aninsulator (230), as disclosed in FIGS. 1A-1B of this embodiment.

FIG. 2C is a further cross-sectional view where the nanoscale pillar(220) is coated with the dielectric layer (250) on the planar portion ofthe insulator (235), wherein an end portion of the insulator (231)coated on the nanoscale pillar (220) protrudes from the dielectric layer(250).

FIG. 2D is a further cross-sectional view where the unprotected portionsof the insulator (231) from FIG. 2C are removed from an end portion ofthe nanoscale pillar (220). After the removal, a protruding portion(222) of the nanoscale pillar (220) and protruding portions (232) of theinsulator (230) are exposed to allow for further fabrication in the nextstep to form, for example a metal contact.

FIG. 2E is a further cross-sectional view where a conductive layer (260)is coated, making contact with the dielectric (250), the end portion ofthe insulator (232) and the end portion of the nanoscale pillar (222). Abackside contact (270) is present on the backside of the substrate(210), opposite the side from the insulator (230). In an optimizedconfiguration, an amount of the insulator (30) material can be thickenedto minimize gate capacitance.

FIGS. 3A-3B are cross-sectional views of a nanoscale pillar (320) on asubstrate (310) where the nanoscale pillar is covered by an insulator(330 & 331), as disclosed in FIGS. 1A-1B of this embodiment.

FIG. 3C is a further cross-sectional view where the insulator (331)layer on the nanoscale pillar portion is removed and a conductive layer(e.g., aluminum) is coated on the remaining insulator portion (330) andthe nanoscale pillar (320).

FIG. 3D is a further cross-sectional view where a dielectric (350) layeris coated on the conductive (340) layer.

FIG. 3E is a further cross-sectional view where a portion of theconductive (340) layer exposed above the dielectric (350) layer isremoved, thereby exposing a protruding portion of the nanoscale pillar(320).

FIG. 3F is a further cross-sectional view where a second conductivelayer (360) is coated, making contact with the dielectric (350) layerand the exposed portion of the nanoscale pillar (320) but does not makecontact with the first conductive (340) layer. A backside contact (370)is present on the substrate (310), opposite the side from the insulator(370) producing a metal-semiconductor (MES) structure which can beuseful for a MESFET transistor. In an optimized configuration, an amountof the insulator (330) material can be thickened to minimize gatecapacitance.

The examples set forth above are provided to give those of ordinaryskill in the art a complete disclosure and description of how to makeand use the embodiments of the present disclosure, and are not intendedto limit the scope of what the inventors regard as their disclosure.Modifications of the above-described modes for carrying out thedisclosure may be used by persons of skill in the art, and are intendedto be within the scope of the following claims. All patents andpublications mentioned in the specification may be indicative of thelevels of skill of those skilled in the art to which the disclosurepertains. All references cited in this disclosure are incorporated byreference to the same extent as if each reference had been incorporatedby reference in its entirety individually.

It is to be understood that the disclosure is not limited to particularmethods or systems, which can, of course, vary. It is also to beunderstood that the terminology used herein is for the purpose ofdescribing particular embodiments only, and is not intended to belimiting. As used in this specification and the appended claims, thesingular forms “a,” “an,” and “the” include plural referents unless thecontent clearly dictates otherwise. The term “plurality” includes two ormore referents unless the content clearly dictates otherwise. Unlessdefined otherwise, all technical and scientific terms used herein havethe same meaning as commonly understood by one of ordinary skill in theart to which the disclosure pertains.

A number of embodiments of the disclosure have been described.Nevertheless, it will be understood that various modifications may bemade without departing from the spirit and scope of the presentdisclosure. Accordingly, other embodiments are within the scope of thefollowing claims.

1-19. (canceled)
 20. An electronic arrangement comprising: a pluralityof insulator covered semiconductor nanoscale pillar structuressubstantially perpendicular to a planar surface; and a conductive layercoated on the insulator covered semiconductor nanoscale pillarstructures.
 21. The arrangement of claim 20, wherein the plurality ofnanoscale pillar structures is located on a substrate.
 22. Thearrangement of claim 21, wherein the semiconductor nanoscale pillarstructures and the substrate are made of silicon.
 23. The arrangement ofclaim 21, wherein a conductive backside contact is coated on a backsideof the substrate, opposite the nanoscale pillar structures.
 24. Thearrangement of claim 20, wherein: the conductive layer and the insulatorlayer are devoid of an end portion thereof, so that end portions of thenanoscale pillar structures are electrically accessible; the arrangementfurther comprising: a dielectric material coated on the planar surface;and a further conductive layer coated on the dielectric material and theaccessible portions of the nanoscale pillar structures, wherein directcontact between the conductive layer and the further conductive layer isabsent.
 25. The arrangement of claim 24, said arrangement being ametal-oxide-semiconductor (MOS) arrangement.
 26. The arrangement ofclaim 25, said arrangement being a field-effect transistor (FET). 27.The arrangement of claim 26, said conductive layer being a gate of theFET.
 28. The arrangement of claim 27, wherein the plurality of thenanoscale pillars is located on a substrate, said substrate and saidfurther conductive layer being a source and a drain or respectively adrain and a source of the FET.
 29. An electronic arrangement comprising:an insulator covered semiconductor substrate; a plurality of nanoscalepillar structures on the substrate, substantially perpendicular to aplanar surface; and a conductive layer covering the insulator and thenanoscale pillar structures, wherein the conductive layer is devoid ofan end portion thereof, so that end portions of the nanoscale pillarstructures are electrically accessible.
 30. The arrangement of claim 29,further comprising: a dielectric material coated on a planar surface;and a further conductive layer coated on the dielectric material and theaccessible portions of the nanoscale pillar structures, wherein directcontact between the conductive layer and the further conductive layer isabsent.
 31. The arrangement of claim 30, said arrangement being ametal-semiconductor (MES) arrangement.
 32. The arrangement of claim 31,wherein the arrangement is a MESFET.